KMID : 1059519950390030163
|
|
Journal of the Korean Chemical Society 1995 Volume.39 No. 3 p.163 ~ p.175
|
|
The Photovoltaic Effect of Iodine-Doped Metal Free Phthalocyanine/ZnO System (¥°)
|
|
Heur Soun-Ok
Kim Young-Soon Park Yoon-Chang
|
|
Abstract
|
|
|
Metal free phthalocyanine(H2Pc) partially doped with iodine, H2Pc(¥°)x, has been made to improve photosensitizing efficiency of ZnO/H2Pc. The content of iodine dopant level(x) for H2Pc(¥°)x upon H2Pc polymorphs was characterized as ¥ö-H2Pc(¥°)0.92 and ¥â-H2Pc(¥°)0.96 by elemental analysis. Characterization of iodine-oxidized H2Pc were investigated by TGA (thermogravimetric analysis), UV-Vis, FT-Ir, Raman and ESR (electron spin resonance) spectrum, and the adsorption properties of H2Pc(¥°)x on ZnO were characterized by means of Raman ESR studies. TGA for H2Pc(¥°)x showed a complete loss of iodine at approximately 265¡É and Raman spectrum of H2Pc(I)x and ZnO/H2Pc(I)x at 514.5 nm showed characteristic I3- patterns in the frequency region 90¡550 cm-1. ZnO/H2Pc(I)x exhibited a very intense and narrow ESR signal at g=2.0025¡¾0.0005 compared to H2Pc/ZnO. Iodine doped ZnO/H2Pc(I)x showed a better photosensitivity compared to iodine undoped ZnO/H2Pc. That is, the surface photovoltage of ¥ö-H2Pc(I)0.92/ZnO was approximately 31 times greater than that of ZnO/¥ö-H2Pc and ZnO/¥â-H2Pc(I)0.96 was 5 times more efficient than ZnO/¥â-H2Pc at 670 nm. And the dependence of photosensitizing effect upon H2Pc polymorphs was exhibited that the surface photovoltage of ZnO/¥ö-H2Pc(I)0.92 was approximately 5 times greater than ZnO/¥â-H2Pc(I)0.96 at 670 nm. Therefore Iodine doping of H2Pc resulted in increase in photoconductivity of H2Pc and photovoltaic effect of ZnO/H2Pc in the visible region.
|
|
KEYWORD
|
|
|
|
FullTexts / Linksout information
|
|
|
|
Listed journal information
|
|
|